Control of interface properties, layer quality and interdiffusion in selected nanoscaled heterostructures

Abstract

Applications of ion beam techniques (IBA and IBMM) on nanoscaled thin films of selected materials (e.g. magnetite Fe 3 O 4, uranium nitride UN) are presented. 1 MeV Ar + and Kr + ion beam with different ion fluences in the range of 1015–1017 ions cm −2 have been used to modify the film interfaces. Selected heterostructure interfaces were treated by subsequent thermal annealing. By analyzing the results obtained for the films in three different states (as-deposition, after annealing and after ion irradiation), the effects of ion beam mixing and interdiffusion were determined.