Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask

Abstract

We have succeeded in controlling the emission wavelength of a self-assembled InAs quantum dot (QD) structure in a narrow region. The emission wavelength of the QDs was varied locally by a covered GaInAs layer grown with an in situ mask, which can be fitted to the sample holder and removed in an ultra-high-vacuum environment. This mask enables the selective growth of high-quality self-assembled QDs with the desired emission wavelengths ranging from 1.23 µm to 1.32 µm. This technique has potential applications in the integration of microstructures with QDs into optoelectronic functional devices.