Control of Film Properties by rf-Sputtering Techniques

Abstract

The versatility of rf sputtering and related processes often allows one to tailor the properties of thin films in ways not always available with other methods of film deposition. Effects that occur at the target, in the gas discharge, and at the substrate are reviewed in the context of their over-all effect on the physical and chemical properties of thin films. Special emphasis is placed on the effects of substrate temperature and the bombardment of substrates by various energetic species. Techniques involving controlled bombardment of substrates (deposition with rf-induced substrate bias) are considered in detail.