Abstract
There are many high-power electrical cables around and within semiconductor foundries. These cables are the source of extremely low-frequency (ELF < 300 Hz) magnetic fields that affect the tools which operate by the function of electronic beams. Miss operation (MO) happens because the ELF magnetic fields induce beam shift during the measurement or process for cutting-edge chips below 40 nm. We present the optimal permutation of power transmission lines to reduce electromagnetic influence in high-technology nano fabs. In this study, the magnetic field was reduced using a mirror array power cable system, and simulation results predicted the best permutations to decrease the electromagnetic interference (EMI) value to below 0.4 mG in a working space without any shielding. Furthermore, this innovative method will lower the cost of high-technology nano fabs, especially for the 28 nm process. The motivation behind this paper is to find the ideal permutation of power transmission lines with a three-phase, four-cable framework to decrease the EMI in high-technology nano fabs. In this study, the electromagnetic interference was diminished using the ideal-permutation methodology without investing or using additional energy, labor, or apparatus. Moreover, this advanced methodology will help increase the effectiveness and reduce the costs of nano fabs. The mathematical and experimental results of the study are presented with analysis.
Highlights
This paper focuses on creating a model to reduce the electromagnetic interference (EMI) for nano fab industries
Maintainingina taining a close to transmission lines and exposure electromagnetic close proximity to transmission and this exposure to their interference terference is harmful to human lines life, and EMI may alsoelectromagnetic lead to inaccurate readings is in harmful to measurement human life, and this EMI may lead to inaccurate readings in industrial meaindustrial equipment this study explains how to reduce surement equipment
Based on the theoretical research and arithmetic simulation by the ideal permutation method, we observed that moderation of EMI with the ideal permutation of a three-phase, four-cable framework for a high-technology nano fab without any shielding
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Over the past few years, the construction of nano fab industries has gradually increased day-to-day across the globe. While constructing a nano fab, one must focus on decreasing the electromagnetic interference (EMI) value exclusively for international research laboratories and independent organizations. These cables are the basis for extremely low-frequency magnetic fields (ELF < 300 Hz) that disturb apparatuses functioning by electronic beam operation [1,2]
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