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Abstract
A novel plasma-based, room-temperature copper etching method was reported recently. In this paper, the authors investigated the influence of process parameters on the edge shape, sidewall profile and the sidewall roughness of the etched copper patterns. The additive gas, such as CF4 and N2, affects not only the etch rate but also the sidewall profile. With the proper plasma condition, such as power, pressure, and additive gas, copper lines with a vertical profile and smooth sidewall surface were obtained.
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