Control of defects in C +, Ge +, and Er + implanted Si using post amorphization and solid phase regrowth

Abstract

In this paper we report a technique to achieve epitaxial regrowth across phase boundaries (EPIFAB) which annihilates defects in samples implanted with high doses of C +, Ge + and Er + ions. Results are presented concerning the application of EPIFAB to the synthesis of SiGe alloys by high dose Ge implantation, showing that end of range (EOR) defects have been annihilated in samples implanted with 3 × 10 16 Ge +/cm 2 and that formation of strain related defects in Ge + implanted samples (9 × 10 16/cm 2) has been inhibited by the implantation of C + followed by EPIFAB. In addition Cat. I damage [K.S. Jones et al., Appl. Phys. A 45 (1988) 1.] has been annihilated in samples implanted with 6 × 10 15 C +/cm 2. Finally it will be shown that the EPIFAB process can be used to control defects in Er + implanted silicon giving an increase in the photoluminescence emission from Er.