Abstract
Hg 1-x Cd x Te (MCT) films were grown by using three kinds of source materials on conventional open tube isothermal vapor phase epitaxy. The composition proble was dependent on the source materials: HgTe and sintered MCT sources resulted low x thick film and high x thin film, respectively. By considering these effects, the mixture sources of HgTe and CdTe enabled to produce the films of flat composition profile with x0.2 and thickness of 10 μm
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