Abstract
Here, we report the change of the FM and AF coexistent state in a MPTM FeRh thin film by simply rotating of the magnetic field. We find that the resistance of the coexistent phase can be changed by up to 19% by the rotation of the magnetic field. This kind of resistance change is obviously different from the usual anisotropic magnetoresistance in metallic materials whether in the angle-dependent behavior or in the magnitude. These results show another way to control the FM-AF coexistent phase, which determines the multifunctional properties of the MPTMs.
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