Abstract
An electron-beam-excited plasma (EBEP) apparatus is one of the plasma sources to produce high density plasma (high ion-current) at low pressure. Its attractive advantage is that plasma parameters can simply be controlled by beem-gun parameters: accelarating voltage (V A) and discharge current (I D). Therefore, it is relatively easy to adjust the plasma parameters to suitable condition in process. As one of the applications, poly-Si etching of floating wafer is attempted in a pure CI 2 plasma by means of reactive ion etching. From the experimental results, it is found that etched pattern tends to change from isotropy to anisotropy owing to increase of sheath potential as V A increases, and that etching rate may be controllable because ion current density increases with I D
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