Abstract
The intense laser field effects on a resonant tunneling structure were studied using computational methods. The considered structure was a GaAs/InxGa1-xAs/Al0.3Ga0.7As/InyGa1-yAs/AlAs/GaAs well-barrier system. In the presence of intense laser fields, the transmission coefficient and the dwell time of the structure were calculated depending on the depth and the width of InGaAs wells. It was shown that an intense laser field provides full control on the performance of the device as the geometrical restrictions on the resonant tunneling conditions overcome. Also, the choice of the resonant energy value becomes possible depending on the field strength.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
