Contribution to the study of polysilanes for high-resolution photolithography

Abstract

Polysilanes form a new class of silicon-containing resists which represent a great deal of interest in recent photolithographic systems in attempt to reach the goal of a submicron resolution. These positive-tone resists suited for photolithography in mid- and deep-UV range present a good withstanding in O 2 plasma. They serve as an efficient RIE barrier and as an imaging top layer for bilevel resist application. In order to improve the contrast and subsequently the resolution of a classical resist, the photobleaching property of the polysilanes is applied to contrast enhancement layer process (CEL). The ability of polysilanes photovolatilization under high fluence exposures (excimer laser) shows their potentiality for self-development resist process. In this work, the synthesis and the physiochemical properties studies of different substituted polysilanes are described and reviewed in respect to their photolithography applications.