Contribution of weak localization, electron–electron interaction, and Zeeman spin-splitting effects in corrective term “ mT1/2” of the metallic conductivity in n-type GaAs

Abstract

We present measurements of the electrical conductivity of barely metallic n-type GaAs that are driven to the metal–insulator transition (MIT) by magnetic field. The experiments were carried out at low temperature in the range (4.2–0.066 K) and in magnetic field up to 4 T. We have determined the magnetic field for which the conductivity changes from the metallic behavior to insulator regime. On the metallic side of the MIT, the electrical conductivity is found to obey σ= σ 0+ mT 1/2 down to 66 mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between different effects involved in the mechanisms of conduction, like electron–electron interaction effect, Zeeman spin-splitting effect, and weak localization effect.