Contribution of the n-side to the R 0A product of long wavelength n+n−pHg1− xCdxTe photodiodes in the diffusion controlled regime

Abstract

The contribution of the n-side to the total differential resistance by area product in the dark (R 0A) of longwavelength n + n − p photodiodes made in Hg 1− x Cd x Te (MCT) is analyzed in the diffusion controlled regime based on a model of an abrupt junction. The results of the modeling indicate that the p-side contribution determines an upper limit to R 0A whose actual value is decreased by the n-side contribution. In many practical diodes, the n-side contribution is negligible, but it can be important under some particular conditions that can occur, as is discussed in this study.