Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon

Abstract

The deep-level centers introduced by the plastic deformation at 680°C in p-type silicon are quantitatively studied by the electron beam induced current (EBIC) and DLTS techniques. It is shown that the DLTS signal is higher than that could be ascribed to the centers located at (or close to) dislocations. In opposite, the number of electrically active defects in the dislocation trails, which is estimated from the EBIC contrast, easily explains the DLTS signal. The possible nature of defects in the dislocation trails is discussed.