Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
Highlights
Electronics using conventional silicon have been developed and are the core of various forms of modern electronic circuitry
Owing to their solutionprocessability [2], easy-to-fabricate large-area deposition [3,4], and endurance to mechanical stress [5,6], polymers are considered promising candidate materials for functional devices, such as flexible and wearable thin-film transistors (TFTs) for next-generation soft display products [7] and disposable electronic sensors enabled by a low-cost fabrication process [8]
Over the past 15 years, efforts have been directed towards the development of functional memory implementation using polymers as critical parts in various memory devices, including floating-gate memory [15,16], ferroelectric memory [17], filament-induced memristors [18,19], and charge-trapping memory [20,21]
Summary
Electronics using conventional silicon have been developed and are the core of various forms of modern electronic circuitry. Li et al fabricated ternary hybrid floating-gate memory using polystyrene (PS), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), which is used for hole trapping, and CsPbBr3 quantum dots (QDs), which trap photoinduced electrons [39] This hybrid film exhibited ambipolar properties that store electrons and hole carriers using irradiating light and a biasing voltage, respectively. He et al reported the storage properties of poly(αmethylstyrene) (PαMS)-based ambipolar memory as the transport properties of minority carriers (electrons) in organic semiconductors (Pentacene) [58] They fabricated a memory device using a PαMS electret layer. By applying blends of organic semiconductors with an optimized proportion ratio, the resulting memory devices showed a 30 V memory window with a 30 V operating voltage, stability endurance performance over 100 times, and 108 s retention time while maintaining a 104 on/off switching current ratio (Figure 3c,d). The barrier modulation of the Al/P(VDF-TrFE) electrode interface showed a huge effect of 106% in the planar FTJ
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