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Abstract
Photovoltaic property of thin films of CdTe doped with Tellurium and Cadmium is studied. Te-doped films show higher photovoltage while the Cd-doped films show lower photovoltage than the undoped films. Tellurium segregates in the grain boundaries forming p-p + junctions with higher potential barrier height. Front surface photovoltage is always found to be greater than that of the back surface. But when CdTe is deposited on substrate having thin layer of Te it shows increase of back surface photovoltage. These results are explained with the help of surface and junction photovoltage.
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