Contribution of inter-valley scattering in governing the steady state optical spin orientation in Al x Ga1−x As

Abstract

The impact of inter-valley scattering in modifying the density of optically injected spin polarized electrons in Al x Ga1−x As/GaAs heterostructure is investigated. Polarization resolved photoluminescence excitation measurements are performed for studying the spectral dependence of degree of circular polarization (DCP) of photoluminescence signal emanating from an adjacent quantum well layer. The experimental DCP spectra is found to deviate from the theoretically calculated curve at high excitation energy and the deviation is seen to widen with the Al-content of Al x Ga1−x As barrier layer. In the past, researchers had attributed similar deviations to the Dyakonov–Perel (DP) spin relaxation mechanism which dominates the electrons spin dynamics at high excitation energy. However, we find that the inter-valley scattering along with the DP mechanism decide the shape of optical spin orientation spectra at higher energy. In fact, at higher Al-content, the inter-valley scattering in Al x Ga1–x As layer becomes the most dominant mechanism to govern the steady state electron spin polarization at the band edge. A numerical model is also proposed for estimating the steady state electron spin polarization at zone centre by including the inter-valley scattering, energy relaxation and DP spin relaxation mechanisms.