Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550°C

C Cobianu,P Cosmin,J Holleman,M Modreanu,D Dascalu

doi:10.1109/smicnd.1997.651587

Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550°C

C Cobianu, P Cosmin + Show 3 more

https://doi.org/10.1109/smicnd.1997.651587

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Publication Date: Oct 7, 1997

Citations: 1

Affiliation: National Institute for Research and Development in Microtechnologies, University of Twente

#Contribution Of Gas Phase Reactions #Low Pressure Chemical Vapor Deposition + Show 8 more

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Abstract

In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH/sub 4/ at low temperatures in the range of 500-550/spl deg/C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.

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