Contribution of electron tunneling transport in semiconductor gas sensor

Abstract

It was found that thin film devices derived from SnO 2 sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.