Contrasting Transport Performance of Electron- and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology

Abstract

Epitaxial graphene grown on silicon carbide (SiC/graphene) is a promising solution for achieving a high-precision quantum Hall resistance standard. Previous research mainly focused on the quantum resistance metrology of n-type SiC/graphene, while a comprehensive understanding of the quantum resistance metrology behavior of graphene with different doping types is lacking. Here, we fabricated both n- and p-type SiC/graphene devices via polymer-assisted molecular adsorption and conducted systematic magneto-transport measurements in a wide parameter space of carrier density and temperature. It is demonstrated that n-type devices show greater potential for development of quantum resistance metrology compared with p-type devices, as evidenced by their higher carrier mobility, lower critical magnetic field for entering quantized Hall plateaus, and higher robustness of the quantum Hall effect against thermal degeneration. These discrepancies can be reasonably attributed to the weaker scattering from molecular dopants for n-type devices, which is further supported by the analyses on the quantum interference effect in multiple devices. These results enrich our understanding of the charged impurity on electronic transport performance of graphene and, more importantly, provide a useful reference for future development of graphene-based quantum resistance metrology.