Abstract
A high contrast electroluminescent (EL) device structure is presented. The diffuse luminous reflectivity from the metal/dielectric/phosphor/indium-tin-oxide/glass EL device structure is /spl sim/3%. A Eu-doped GaN phosphor is used to demonstrate the contrast-enhanced operation. Low reflectivity is achieved by inserting a light-absorbing black thick-film BaTiO/sub 3/ layer between the phosphor and the rear metal electrode. In addition to providing contrast enhancement, the opaque thick dielectric film exhibits capacitance and high voltage reliability (40 nF/cm/sup 2/, dielectric constant /spl epsi//sub d/ /spl sim/ 500-1000, breakdown field E/sub d,br/ /spl sim/ 0.1-0.4 MV/cm) similar to that of the highest performance transparent thin-film dielectrics. An EL device luminance of only 20 cd/m/sup 2/ is sufficient for a display contrast ratio of /spl sim/10:1 under 140 lux indoor ambient lighting (illumination). Under sunlight illumination of 100000 lux, a display contrast ratio of >3:1 is expected with application of additional contrast enhancement techniques.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
