Abstract
STEM is an important tool for the study of material by forming Z-contrast ADF images. Studies of strain fields suggest that strain can cause extra contrast in ADF images. Since strain fields exist in many TEM samples, especially interfaces of two different materials, it is necessary to study the contrast effect of strain fields in more detail. in this paper, we study the contrast effect of strain fields by STEM experiments and multislice simulations.Sample thickness and the dimensions of ADF detector can both affect strain contrast. We first study the influence of sample thickness. A cross-section TEM sample of an interface of crystal silicon and amorphous silicon was prepared by typical tripod polishing and was studied with the 100 kV Cornell VG 5.0 UHV STEM. The sample was tilted so that the crystal was on the (110) zone axis and ADF images of the interface were recorded.
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