Abstract
Misfit dislocations are often observed between epitaxial layers. The introduction of these dislocations at the interface depends upon the presence of suitable slip planes between the crystals. The aim of this paper is to describe a crystal system in which such slip planes do not occur. Epitaxial Mg films were grown by evaporation onto hot MoS 2 thin platelets in high vacuum. In such a combination there are no slip planes to allow the introduction of interfacial misfit dislocations. Another type of dislocation with curved lines appears in the substrate as a consequence of the stresses induced by the overgrowth.
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