Abstract
A continuum based-model of Silicon diffusion in ion-implanted InGaAs is presented. Several 5×1014 10keV Si+ implants into InGaAs were Rapid Thermal Annealed (RTA) at 750°C ranging from 10-40s. Box-like profiles characteristic of concentration-dependent diffusion were observed, similar to furnace anneals reported previously. Diffusivity extractions were carried out using FLOOPS (Florida Object Oriented Process Simulator), using point defect pairs, and Fermi level effects. Overall consideration of model fits and possible options for further development are suggested.
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