Abstract
The notion of a continuum exciton as an autolocalized state is presented. A state of this kind arises from interactions between an electron (a hole) in the conduction band (valence band) and a ``continuum'' of holes (electrons) in the p-type (n-type) semiconductor. The ground and the first excited states of the exciton are calculated. The possibility for a continuum exciton to form a bound state with the impurity center is also analyzed. The value of the shift in energy, given by the formation of a continuum exciton, exhibits correct values for a narrowing of the band gap in semiconductors and describes correctly the dependence of this narrowing on the concentration of the impurity dopant. It is also shown that in a semiconductor with sufficiently large hole (electron) concentration, the formation of a bielectron (bihole) state is possible. The formation of such states can result in superconductivity.
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