Abstract

Mid-infrared photonic crystal enhanced lead-salt light emitters operating under continuous-wave mode at room temperature were investigated in this work. For the device, an active region consisting of 9 pairs of PbSe/Pb0.96Sr0.04Se quantum wells was grown by molecular beam epitaxy method on top of a Si(111) substrate which was initially dry-etched with a two-dimensional photonic crystal structure in a pattern of hexagonal holes. Because of the photonic crystal structure, an optical band gap between 3.49 and 3.58 µm was formed, which matched with the light emission spectrum of the quantum wells at room temperature. As a result, under optical pumping, using a near-infrared continuous-wave semiconductor laser, the device exhibited strong photonic crystal band-edge mode emissions and delivered over 26.5 times higher emission efficiency compared to the one without photonic crystal structure. The output power obtained was up to 7.68 mW (the corresponding power density was ~363 mW/cm2), and a maximum quantum efficiency reached to 1.2%. Such photonic crystal emitters can be used as promising light sources for novel miniaturized gas-sensing systems.

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