Abstract

Vanadium dioxide (VO2), a typical strongly correlated transition metal oxide, undergoes a fascinating reversible metal-insulator transition (MIT) at 340 K, attracting increasing interest from both scientific and technological perspectives. Nevertheless, achieving a rational regulation of the phase transition temperature (Tc) and gaining a deeper understanding of the modulation mechanism, as well as clarifying the relationship between the dopants and Tc in VO2, remain significant ongoing challenges. In this work, we present a density functional theoretical study on the structural and electronic properties of T-doped (T = Ta, Nb) VO2. The results demonstrate that the introduction of T (T = Ta, Nb) atoms tends to drive the R phase structure towards a dimerized monoclinic-like structure, while the uniformly aligned V–V chains exhibit alternating short and long V–V dimerization feature. Notably, the R phase VO2 appears to be more susceptible to structural perturbations. Moreover, T (T = Ta, Nb) doping concentration, compressive strain and the numbers of T-T chain cause curious changes in the structural evolution and electronic structures of VO2, acting as effective modulation methods for tuning the phase transition temperature. In addition, the Tc of VO2 could be significantly reduced when the concentration of T (T = Ta, Nb) dopant is less than 6.3%. The current results offer valuable insights into the mechanism of the doping driven MIT in T-doped (T = Ta, Nb) VO2, and contribute to a deeper understanding of the relationship between the dopants and phase transition temperature, further providing valuable insights into its metal-insulator transition behavior.

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