Abstract
AbstractThe kinetics of recombination luminescence of β‐irradiated AlN single crystals has been studied with continuous wave optically stimulated luminescence (CW‐OSL) method. It is shown that the OSL process is characterized by two exponential components with a decay time τ = 32 and 212 s. Photoionization cross‐sections σ = 4.8·10‐19 and 7.3·10‐20 cm2 have been evaluated, assuming each component is related to electron traps based on VN‐ and/or ON‐centers at various charged states. It is established that dose dependences of the OSL response of the bulk crystals under study are linear with taking into correct accounting for the radiation induced afterglow and hence can be used for quantitative estimates in solid state dosimetry. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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