Abstract
New structural designs are adopted to reduce the waveguide loss and increase the internal quantum efficiency of lateral current injection lasers consisting of a thin GaInAsP core layer grown on a semi-insulating InP substrate. This led to a drastic reduction in the threshold current. Room temperature continuous-wave operation has been successfully realized with a threshold current of 11 mA and an external differential quantum efficiency of 33% for a stripe width of 1.7 µm and a cavity length of 720 µm.
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