Abstract
A novel approach to realize DFB gratings on GaN based laser diodes is presented and continuous-wave single longitudinal mode operation is achieved. The first order gratings were fabricated on the surface of indium tin oxide (ITO) on top of the laser ridge, which combines the benefits of simplified fabrication, easy scalability to wider ridges, and no regrowth or overgrowth. Under continuous-wave operation, the laser emits with a full FWHM of 5pm, a SMSR of 29dB and output power from a single facet as high as 80mW. To the best of authors' knowledge, this is also the first demonstration of a DFB-LD on semipolar InGaN/GaN system.
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