Abstract
An InGaAs/GaAs vertical-cavity surface-emitting laser has been fabricated on a (311)B GaAs substrate. Pulsed lasing operation is obtained at room temperature, and continuous-wave lasing operation is obtained at less than 270 K. From the device, blue laser emission based on second-harmonic generation is observed. The wavelength of the blue laser emission is 482 nm. At 135 K, its output power is 1 nW under continuous-wave operation and more than 10 nW under pulsed operation.
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