Abstract
GaSb-based diode lasers with type-I quantum-well active region located either in the center of quinary AlInGaAsSb broadened waveguide or shifted to the p-cladding side were fabricated and characterized. Devices with narrower ‘p-side waveguide’ demonstrate better performance. We explain the phenomenon by reduced hole concentration in the waveguide region of the device. At 12 °C, lasers with optimized design generate above 65 mW of continuous wave output power at 3.2 µm.
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