Abstract
Continuous lasing at room temperature was achieved in injection lasers with buried mesa-stripe GaInPAs/InP heterostructures emitting in the wavelength range 1.5–1.6 μ. The substrates were made of p-type InP, whereas the emitter layers and the material above the buried heterostructure was a quaternary solid solution of intermediate composition. The minimum threshold current was 23 mA.
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