Abstract
Stripe-geometry In 1-x Ga x P 1-z As z ( x \approx 0.84-0.86, z \approx 0.38-0.42 ) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs 1-y P y substrates, are described that operate (CW, 77 K) in the visible at \lambda \approx 6280-6360 A with differential quantum efficiency \eta_{ext} \sim 28 percent and power output in the range 1-7 mW.
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