Abstract
We have studied the transport properties in metallic n-type InP semiconductor. We show that the dependence on temperature of metallic electrical conductivity obey to the law 𝜎 = 𝜎(𝑇 = 0) + 𝑚𝑇1/2. We highlight the absence of a minimum electrical conductivity 𝜎𝑚𝑖𝑛 proposed by Mott at the metal-insulator transition. We show that the conductivity at temperature T = 0 K, 𝜎(𝑇 = 0) , follows a scaling law as a function of the effective parallel and perpendicular Bohr radii 𝑎∥ and 𝑎⊥.
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