Continuous Growth of Highly Reproducible Single-Layer Graphene Deposition on Cu Foil by Indigenously Developed LPCVD Setup.

Abstract

Continuous growth of high-quality single-layer graphene (SLG) is highly desirable in several electronic and optoelectronic applications. To fulfill such requirements, we proposed a low-cost, highly reproducible high-quality SLG synthesized by indigenously developed low-pressure chemical vapor deposition (LPCVD) setup. The quality of SLG is examined by Raman spectroscopy, where we have probed the I2D/IG ratio for continuous 30 runs to assess the reproducibility and quality of single-layer using proposed indigenous LPCVD setup for device fabrication. The highest I2D/IG ratio of SLG (5.82) was found with full width at half maximum values of 2D peak and G peak of ∼30.10 cm−1 and ∼20.86 cm–1, respectively. Further, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy have been performed to study the quality of SLG. Thickness measurement of graphene with graphene grain size is calculated from atomic force microscopy studies, and the average grain size is found to be 1–3 μm. Moreover, I–V characteristics have also been investigated by the two-probe method to ensure the quality of SLG. The lowest resistance of the SLG (∼387 Ω) was found at room temperature. Thus, this new indigenously developed low-cost setup provides a novel alternative method to produce highly reproducible metrology-grade continuous SLG on Cu substrate for next-generation quantum devices.