Abstract
CoSi2 thin layers were fabricated by Co-ion implantation into Si(100) and subsequent annealing. The ion implantation was carried out in a metal vapour vacuum are (MEVVA) source implanter. Various doses of Co ions were implanted using doses of 1.6 x 10(17) to 7.5 x 10(17) Co/cm(2) at an extraction voltage of 40 kV and ion current densities of 60 and 150 mu A/cm(2). It was found that the thicknesses of continuous CoSi2 layers after annealing within Si(100) increased with increasing implantation dose, and ranged from 43 to 60 nm for the implantation doses used in this work. The specific resistivity of implanted samples after annealing was between 12.1 and 13.8 mu Omega cm at room temperature. The results indicated that the ion current density played an important role in the structure of the CoSi2 layer, and annealing can significantly improve the electrical property of the CoSi2 layers.
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