Abstract
Room temperature electric field controlled magnetism is extremely promising for the next-generation high-performance spintronic devices. Here, based on the ferroelectric switching driven oxygen ion migration in the Ta/Co/BiFeO3/SrRuO3 heterostructures, the magnetic moment, magnetic coercive field, exchange bias field, and junction resistance are reversibly manipulated by tuning the ferroelectric polarization of the BiFeO3 layer. All these phenomena are consistently explained by the oxygen ion migration induced CoOx/Co redox effect, which is evidenced by the synchrotron X-ray absorption spectroscopy measurements. Interestingly, owing to the controllable ferroelectric switching dynamics of the BiFeO3 thin film, the magnetic coercive field of the Co thin film can be continuously and precisely tuned by controlling the ferroelectric polarization of the BiFeO3 thin film, and the manipulating speed of the voltage control of magnetism can be fast to 100 ns. This nonvolatile, stable, reversible, fast, and reproducible voltage control of magnetism shows great potential for designing low-power and high-speed spintronics.
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