Abstract
Using a modified mesa structure of high-Tc superconducting Bi2Sr2CaCu2O8+δ with a thin underlaying base superconductor (∼3 μm), the effective working temperature of the continuous and monochromatic terahertz emitter is extended up to 70 K, and the maximum power of ∼30 μW at 0.44 THz is achieved at the relatively high temperature of Tb = 55 K in a low bias current retrapping region. The diverging behavior of the intensity occurring at 55 K in the low current regime without hot spot formation may provide us an important clue for the stronger THz radiation from intrinsic Josephson junction devices.
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