Abstract
The formation of cobalt silicides using 200 keV Ar + ion beam mixing has been studied as a function of subsequent vacuum optical annealing at temperatures in the range 500–700°C. Elemental intermixing and silicide stoichiometry were studied using Rutherford alpha backscattering. The effects of Ar + ion dose on cobalt films thermally evaporated in poor vacuum (10 −5 torr) and high vacuum (5×10 −9 torr) have been investigated. Dose dependence studies showed that whilst the high-vacuum deposited films formed stoichiometric silicides with zero bombardment dose over the whole temperature range, the contaminated Co film samples requires a minimum bombardment dose dependent on temperature.
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