Abstract
Semi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential screening probes. In addition, the improved materials quality enhances the resolution of such spectroscopic measurements to better understand the material. The EPR spectra reveal the expected V 4+ as well as the shallow boron center, suggesting inhomogeneities in the B and/or V distribution. We observe significant reduction in the free-carrier absorption compared with n-type material and the intra-3d-shell E 2– 2T 2 IR absorption. In addition, we observe an N-related gap mode which may serve as a quantitative probe of the N content. The photoluminescence from the V-doped sample exhibits weak donor-bound excitons and shows a broad structured band near 3.0 eV related to recombination between photoneutralized N-donors and photoneutralized acceptors.
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