Abstract
Abstract A contactless microwave method is presented for the measurement of the recombination lifetime of free carriers in high-ohmic silicon wafers (4 kω cm), which are used for the processing of (nuclear) radiation sensors. It is shown that the bulk lifetime can be measured following processing steps independent of surface parameters, when the intensity of the light source is kept low. The results of the measurements carried out by this method are compared with the results obtained by leakage current measurements. Good agreement is observed between the results.
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