Abstract
A specially designed resonator to avoid the change of the resonance characteristics by thermal influences of the laser beam was fabricated on a silicon on insulator wafer. This resonator design enables one to apply a lateral driving force to generate lateral vibration. The resonator was excited using a laser diode which was driven with sinusoidal current, and the vibration was detected by measuring intensity fluctuation of the He–Ne laser beam reflected on the resonator mass. Four evident resonance frequencies were successfully observed in the range from 100 Hz to 100 kHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
