Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique

Abstract

Surface properties of ion-implanted silicon are investigated by the microwave photoconductivity decay method. The effective surface recombination velocity (S) is estimated by fitting of the experimental decay curve of excess carrier concentration with a theoretical decay curve. The results show that S is almost inversely proportional to the carrier concentration of the heavily doped layer formed by the ion-implantation for both types of high-low junction ( n+n, p+p). Thus the present method is a powerful tool for surface characterization.