Contactless determination of doping concentration and resistivity of silicon wafers with cavity ring-down technique

Abstract

A contactless method for measuring the doping concentration and resistivity of silicon wafers based on cavity ring-down technique was developed and verified experimentally. The doping concentration and resistivity of the silicon wafer in our experiment were calculated to be 1.53 ± 0.47 × 1016 cm−3 and 1.08 ± 0.41 Ω·cm, respectively, by measuring the optical loss caused by the sample, which are consistent with that obtained with conventional four-point probe measurements. The results indicated that the proposed method can be an alternative non-destructive tool for doping concentration and resistivity measurements.