Abstract
The passivating influence of a-Si:H films on the c-Si surface is shown by contactless transient photoconductivity measurements in the microwave frequency range. A relation between the signal and the performance of a-Si:H/c-Si heterojunctions for solar energy conversion was found. The injection of excess charge carriers from the a-Si:H film into the c-Si substrate was observed and shown to yield information on charge carrier transport in the a-Si:H film and in the space charge region.
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