Abstract
The contamination results of extended ion or electron beam irradiation, the type of substrate used, the time required to contact a set of nanowires to gain accurate acknowledge on nanowires properties are the main limitations of focused ion beam (FIB) and electron beam lithography (EBL) techniques for nanowires characterization. We present in this latter, a direct writing technique which is laser photolithography to contact a set of core/shell Si/SiO2 nanowires fabricated by 30 KeV AuSi liquid metal alloy source focused ion beam LMAIS-FIB using Au+ ions to allow forward the electrical characterization of these nanowires.
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