Abstract
The topics of this chapter constitute a field of modern technical electronics that has achieved tremendous importance. The pertinent theory has turned out to be very complicated, and comprehensive handbooks have been devoted to it exclusively1. In view of this situation it would be meaningless to try presenting any detailed treatment within the compass of the present book. But it will be useful for various readers to obtain a description of some typical phenomena that are pertinent to the theory of contacts with semiconductors. No completeness is pursued. For instance, the discussion on rectification will be confined to the case with a boundary exhaustion layer that has a thickness larger than the mean free path of the current carriers. This case is realized in the so-called diffusion rectification. Its theory is presented in the pioneer papers of Schottky 2. When the thickness of the exhaustion layer is about equal to or smaller than the mean free path of the current carriers, rectification — diode rectification — can also appear, but its explanation, on which we do not enter, is otherwise than for the diffusion case.
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