Abstract
Transmission line model and end resistance measurements were made to determine the contact resistivity of Mg and Mg2Si contacts to Si doped n-type in the range 1018–1020 cm−3. The data are consistent with a barrier height of 0.4 eV for Mg and 0.52 eV for Mg2Si. The morphology, structure, and composition were studied using transmission electron microscopy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.