Abstract
ABSTRACTAchieving low resistance ohmic contacts for heavily doped devices is critical towards ensuring that contact resistance does not dominate the device performance. Here, we report contact resistance studies done on Pt/LSMO, Ni/LSMO and Au/LSMO metal-semiconductor interfaces. Phase-pure LSMO thin films deposited on n+ Si substrates were lithographically patterned and metallized to produce circular transfer length method (CTLM) based specific contact resistivity (ρc) and transfer length (LT) evaluation structures. Based on the electrical performance, interfacial reactivity and mechanical stability of the three metal junctions, the lowest ρc and LT metal for LSMO films on Si is identified for device applications.
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